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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BU931R description high voltage darlington applications high ruggedness electronic ignitions high voltage ignition coil driver absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 450 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current 15 a i cm collector current-peak 30 a i b base current 1 a i bm base current-peak 5 a p c collector power dissipation @t c =25 175 w t j junction temperature 200 t stg storage temperature range -40~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BU931R electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0; l= 10mh 400 v v ce (sat)-1 collector-emitter saturation voltage i c = 7a; i b = 70ma 1.6 v v ce (sat)-2 collector-emitter saturation voltage i c = 8 a; i b = 100ma 1.8 v v ce (sat)-3 collector-emitter saturation voltage i c = 10 a; i b = 250ma 1.8 v v be (sat)-1 base-emitter saturation voltage i c = 8 a; i b = 100ma 2.2 v v be (sat)-2 base-emitter saturation voltage i c = 10a; i b = 250ma 2.2 v i ces collector cutoff current v ce = 450v;v be = 0 v ce = 450v;v be = 0;t j = 125 1.0 5.0 ma i ceo collector cutoff current v ce = 400v;i b = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 50 ma h fe dc current gain i c = 5a; v ce = 10v 300 v ecf c-e diode forward voltage i f = 10a 2.8 v |
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